Turns off to prevent excessive dissipation and includes built-in protection that prevents cycle distortion and minimises energy losses For safe control of silicon carbide (SiC) MOSFETs while operating from a high-voltage rail up to 1200V is the newly launched isolated gate driver, the STGAP2SiCS. It is capable of producing a gate-driving voltage of up to […]
The post Isolated Gate Driver That Safely Controls SiC MOSFETs appeared first on Electronics For You.
No comments:
Post a Comment